R10DS0218EJ0100 Rev.1.00

Page 1 of 16

Oct 07, 2013

Data Sheet

HN58C256AI Series

256k EEPROM (32-kword

× 8-bit)

Description

Renesas Electronics' HN58C256AI are electrically erasable and programmable ROMs organized as 32768-word

× 8-bit.

They have realized high speed low power consumption and high reliability by employing advanced MNOS memory

technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make

their write operations faster.

Features

• Single 5 V supply: 5 V ±10%

• Access time: 85 ns/100 ns (max)

• Power dissipation

⎯ Active: 20 mW/MHz, (typ)

⎯ Standby: 110 μW (max)

• On-chip latches: address, data, CE, OE, WE

• Automatic byte write: 10 ms max

• Automatic page write (64 bytes): 10 ms max

• Data polling and Toggle bit

• Data protection circuit on power on/off

• Conforms to JEDEC byte-wide standard

• Reliable CMOS with MNOS cell technology

• 10 years data retention

• Software data protection

• There are lead free products

R10DS0218EJ0100

Rev.1.00

Oct 07, 2013