NDP6051 datasheet(2/6 Pages) FAIRCHILD

Part #	NDP6051

Description	N-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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2 / 6 page

Electrical Characteristics (T

C = 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

DRAIN-SOURCE AVALANCHE RATINGS (Note 1)

W

DSS

Single Pulse Drain-Source Avalanche

Energy

V

DD = 25 V, ID = 48 A

300

mJ

I

AR

Maximum Drain-Source Avalanche Current

48

A

OFF CHARACTERISTICS

BV

DSS

Drain-Source Breakdown Voltage

V

GS = 0 V, ID = 250 µA

50

V

I

DSS

Zero Gate Voltage Drain Current

V

DS = 50 V, VGS = 0 V

250

µA

T

J = 125°C

1

mA

I

GSSF

Gate - Body Leakage, Forward

V

GS = 20 V, VDS = 0 V

100

nA

I

GSSR

Gate - Body Leakage, Reverse

V

GS = -20 V, VDS = 0 V

-100

nA

ON CHARACTERISTICS (Note 1)

V

GS(th)

Gate Threshold Voltage

V

DS = VGS, ID = 250 µA

2

2.8

4

V

T

J = 125°C

1.4

2.2

3.6

R

DS(ON)

Static Drain-Source On-Resistance

V

GS = 10 V, ID = 24 A

0.018

0.022

Ω

T

J = 125°C

0.03

0.04

I

D(on)

On-State Drain Current

V

GS = 10 V, VDS = 10 V

60

A

g

FS

Forward Transconductance

V

DS = 10 V, ID = 24 A

14

S

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance

V

DS = 25 V, VGS = 0 V,

f = 1.0 MHz

1220

pF

C

oss

Output Capacitance

520

pF

C

rss

Reverse Transfer Capacitance

190

pF

SWITCHING CHARACTERISTICS (Note 1)

t

D(on)

Turn - On Delay Time

V

DD = 30 V, ID = 48 A,

V

GS = 10 V, RGEN = 7.5 Ω

10

20

nS

t

r

Turn - On Rise Time

132

250

nS

t

D(off)

Turn - Off Delay Time

28

55

nS

t

f

Turn - Off Fall Time

80

150

nS

Q

g

Total Gate Charge

V

DS = 24 V,

I

D = 48 A, VGS = 10V

37

53

nC

Q

gs

Gate-Source Charge

8

Q

gd

Gate-Drain Charge

22

NDP6051 Rev. C1

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