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R1EX24512BTAS0IU0 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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R1EX24512BTAS0IU0 Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 19 page  R1EX24512BSAS0I/R1EX24512BTAS0I R10DS0026EJ0400 Rev.4.00 Page 3 of 17 Sep, 20, 2013 Absolute Maximum Ratings Parameter Symbol Value Unit Supply voltage relative to VSS VCC −0.6 to +7.0 V Input voltage relative to VSS Vin −0.3 to VCC +0.3 V Operating temperature range* 1 Topr −40 to +85 °C Storage temperature range Tstg −55 to +125 °C Notes: 1. Including electrical characteristics and data retention. DC Operating Conditions Parameter Symbol Min Typ Max Unit Supply voltage VCC 1.8 ⎯ 5.5 V VSS 0 0 0 V Input high voltage VIH VCC × 0.7 ⎯ VCC + 0.3 V Input low voltage VIL −0.3 ⎯ VCC × 0.3 V Operating temperature Topr −40 ⎯ +85 °C DC Characteristics (Ta = −40 to +85°C, V CC = 1.8 V to 5.5 V) Parameter Symbol Min Typ Max Unit Test conditions Input leakage current ILI ⎯ ⎯ 2.0 μA VCC = 5.5 V, Vin = 0 to 5.5 V Output leakage current ILO ⎯ ⎯ 2.0 μA VCC = 5.5 V, Vout = 0 to 5.5 V Standby VCC current ISB ⎯ 1.0 2.0 μA VCC = 5.5 V, Vin = VSS or VCC ⎯ 0.2 ⎯ μA VCC = 3.3 V, Vin = VSS or VCC Read VCC current ICC1 ⎯ ⎯ 1.0 mA VCC = 5.5 V, Read at 400 kHz ⎯ 0.3 ⎯ mA VCC = 3.3 V, Read at 400 kHz Write VCC current ICC2 ⎯ ⎯ 5.0 mA VCC = 5.5 V, Write at 400 kHz ⎯ 1.5 ⎯ mA VCC = 3.3 V, Write at 400 kHz Output low voltage VOL2 ⎯ ⎯ 0.4 V VCC = 2.7 to 5.5 V, IOL = 3.0 mA VOL1 ⎯ ⎯ 0.2 V VCC = 1.8 to 2.7 V, IOL = 1.5 mA Capacitance (Ta = +25 °C, f = 1 MHz) Parameter Symbol Min Typ Max Unit Test conditions Input capacitance (A0 to A2, SCL, WP) Cin* 1 ⎯ ⎯ 6.0 pF Vin = 0 V Output capacitance (SDA) CI/O* 1 ⎯ ⎯ 6.0 pF Vout = 0 V Note: 1. Not 100 % tested. Memory cell characteristics (VCC = 1.8 V to 5.5 V) Endurance 1,000k Cycles min. Notes 1 Data retention 100 Years min. Notes 1 Notes: 1. Not 100 % tested. Data of shipped sample All bits of EEPROM are logical “1” (FF Hex) at shipment. |
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