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R1EX25008ASA00G Datasheet(PDF) 3 Page - Renesas Technology Corp |
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R1EX25008ASA00G Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 22 page R1EX25008ASA00G/R1EX25008ATA00G/R1EX25016ASA00G/R1EX25016ATA00G Preliminary Block Diagram High voltage generator Memory array Y-select & Sense amp. Serial-parallel converter VCC VSS S W C HOLD D Q Voltage detector Absolute Maximum Ratings Parameter Symbol Value Unit Supply voltage relative to VSS VCC 0.6 to +7.0 V Input voltage relative to VSS VIN 0.5*2 to +7.0*3 V Operating temperature range* 1 Topr 40 to +105 C Storage temperature range Tstg 55 to +125 C Notes: 1. Including electrical characteristics and data retention. 2. VIN (min): 3.0 V for pulse width 50 ns. DC Operating Conditions Parameter Symbol Min Typ Max Unit VCC 1.8 5.5 V Supply voltage VSS 0 0 0 V VIH VCC 0.7 VCC 0.5* 2 V Input voltage VIL 0.3*1 VCC 0.3 V Operating temperature range Topr 40 +105 C Notes: 1. VIN (min): 1.0 V for pulse width 50 ns. 2. VIN (max): VCC + 1.0 V for pulse width 50 ns. Capacitance (Ta = +25 C, f = 1 MHz) Parameter Symbol Min Typ Max Unit Test conditions Input capacitance (D, C, S, W, HOLD) Cin* 1 6.0 pF Vin = 0 V Output capacitance (Q) CI/O* 1 8.0 pF Vout = 0 V Note: 1. Not 100 tested. Memory cell characteristics (VCC = 1.8 V to 5.5 V) Ta=85 C Ta=105 C Notes Endurance 1,000k Cycles min. 200k Cycles min. 1 Data retention 20 Years min. 20 Years min. 1 Note: 1. Not 100 tested. R10DS0083EJ0100 Rev.1.00 Page 3 of 20 Oct. 02, 2012 |
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