R1EX25008ASA00G datasheet(3/22 Pages) RENESAS

Part #	R1EX25008ASA00G

Description	Serial Peripheral Interface 8k EEPROM 16k EEPROM

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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R1EX25008ASA00G/R1EX25008ATA00G/R1EX25016ASA00G/R1EX25016ATA00G

Preliminary

Block Diagram

High voltage generator

Memory array

Y-select & Sense amp.

Serial-parallel converter

VCC

VSS

S

W

C

HOLD

D

Q

Voltage detector

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Supply voltage relative to VSS

VCC

0.6 to +7.0

V

Input voltage relative to VSS

VIN

0.5*2 to +7.0*3

V

Operating temperature range*

1

Topr

40 to +105

C

Storage temperature range

Tstg

55 to +125

C

Notes: 1. Including electrical characteristics and data retention.

2. VIN (min): 3.0 V for pulse width  50 ns.

DC Operating Conditions

Parameter

Symbol

Min

Typ

Max

Unit

VCC

1.8



5.5

V

Supply voltage

VSS

0

V

VIH

VCC  0.7



VCC  0.5*

2

V

Input voltage

VIL

0.3*1



VCC  0.3

V

Operating temperature range

Topr

40



+105

C

Notes: 1. VIN (min): 1.0 V for pulse width  50 ns.

2. VIN (max): VCC + 1.0 V for pulse width  50 ns.

Capacitance

(Ta = +25

C, f = 1 MHz)

Parameter

Symbol

Min

Typ

Max

Unit

Test conditions

Input capacitance (D, C, S, W, HOLD)

Cin*

1



6.0

pF

Vin = 0 V

Output capacitance (Q)

CI/O*

1



8.0

pF

Vout = 0 V

Note: 1. Not 100

 tested.

Memory cell characteristics

(VCC = 1.8 V to 5.5 V)

Ta=85

C

Ta=105

C

Notes

Endurance

1,000k Cycles min.

200k Cycles min.

1

Data retention

20 Years min.

1

Note: 1. Not 100

 tested.

R10DS0083EJ0100 Rev.1.00

Page 3 of 20

Oct. 02, 2012

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