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D5V0F2B2LP-13 Datasheet(PDF) 2 Page - Diodes Incorporated |
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D5V0F2B2LP-13 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 4 page D5V0L1B2LP Document number: DS35427 Rev. 9 - 2 2 of 4 www.diodes.com January 2012 © Diodes Incorporated D5V0L1B2LP Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Conditions Peak Pulse Power Dissipation PPP 84 W 8/20 μs, per Fig. 1 Peak Pulse Current IPP 6 A 8/20 μs, per Fig. 1 ESD Protection – Contact Discharge VESD_Contact ±30 kV IEC 61000-4-2 Standard ESD Protection – Air Discharge VESD_Air ±30 kV IEC 61000-4-2 Standard Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 4) PD 250 mW Thermal Resistance, Junction to Ambient (Note 4) RθJA 500 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage VRWM - - 5 V - Channel Leakage Current (Note 5) IRM - 10 100 nA VRWM = 5V Clamping Voltage, Positive Transients VCL - 7.0 9.0 V IPP = 1A, tp = 8/20μS - 8.7 10.7 IPP = 3A, tp = 8/20μS - 10.5 12.0 IPP = 5A, tp = 8/20μS - 11.5 14.0 IPP = 6A, tp = 8/20μS Breakdown Voltage VBR 6 7 8 V IR = 1mA Differential Resistance RDIF - 0.2 - Ω IR = 1A, tp = 8/20μS Channel Input Capacitance CIN - 15 20 pF VR = 0V, f = 1MHz Notes: 4. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com. 5. Short duration pulse test used to minimize self-heating effect. 0 t, TIME ( s) Fig. 1 Pulse Waveform μ 20 40 60 100 50 0 10 11 12 13 14 15 16 17 18 0 1 2 3 456 V , REVERSE VOLTAGE (V) Fig. 2 Typical Total Capacitance vs. Reverse Voltage R f = 1 MHz |
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