NDB7061 datasheet(2/7 Pages) FAIRCHILD

Part #	NDB7061

Description	N-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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Electrical Characteristics (T

C = 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

W

DSS

Single Pulse Drain-Source Avalanche

Energy

V

DD = 30 V, ID = 64 A

500

mJ

I

AR

Maximum Drain-Source Avalanche Current

64

A

OFF CHARACTERISTICS

BV

DSS

Drain-Source Breakdown Voltage

V

GS = 0 V, ID = 250 µA

60

V

I

DSS

Zero Gate Voltage Drain Current

V

DS = 48 V, VGS = 0 V

10

µA

T

J = 125°C

1

mA

I

GSSF

Gate - Body Leakage, Forward

V

GS = 20 V, VDS = 0 V

100

nA

I

GSSR

Gate - Body Leakage, Reverse

V

GS = -20 V, VDS = 0 V

-100

nA

ON CHARACTERISTICS (Note 1)

V

GS(th)

Gate Threshold Voltage

V

DS = VGS, ID = 250 µA

2

2.9

4

V

T

J = 125°C

1.4

2.2

3.6

R

DS(ON)

Static Drain-Source On-Resistance

V

GS = 10 V, ID = 35 A

0.013

0.016

Ω

T

J = 125°C

0.021

0.032

I

D(on)

On-State Drain Current

V

GS = 10 V, VDS = 10 V

60

A

g

FS

Forward Transconductance

V

DS = 10 V, ID = 35 A

30

S

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance

V

DS = 25 V, VGS = 0 V,

f = 1.0 MHz

1930

pF

C

oss

Output Capacitance

870

pF

C

rss

Reverse Transfer Capacitance

310

pF

SWITCHING CHARACTERISTICS (Note 1)

t

D(on)

Turn - On Delay Time

V

DD = 25 V, ID = 64 A,

V

GS = 10 V, RGEN = 5 Ω

13

30

nS

t

r

Turn - On Rise Time

98

200

nS

t

D(off)

Turn - Off Delay Time

36

80

nS

t

f

Turn - Off Fall Time

65

150

nS

Q

g

Total Gate Charge

V

DS = 48 V,

I

D = 64 A, VGS = 10 V

67

100

nC

Q

gs

Gate-Source Charge

11

nC

Q

gd

Gate-Drain Charge

37.5

nC

NDP7061 Rev. C / NDB7061 Rev. D

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