BFP640E6327 datasheet(6/10 Pages) INFINEON

Part #	BFP640E6327

Description	NPN Silicon Germanium RF Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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6 / 10 page

2007-05-29

BFP640

6

Third order Intercept Point IP3=ƒ(IC)

(Output, ZS=ZL=50Ω)

VCE = parameter, f = 1.8 GHz

0

10

20

30

40

mA

60

IC

0

3

6

9

12

15

18

21

24

dBm

30

2V

3V

4V

Transition frequency fT= ƒ(IC)

f = 1GHz

VCE = parameter

0

10

20

30

40

mA

60

IC

0

5

10

15

20

25

30

35

GHz

45

3V

2V

1V

0.5V

Power gain Gma, Gms = ƒ(IC)

VCE = 3V

f = parameter

0

10

20

30

40

mA

60

IC

10

12

14

16

18

20

22

24

26

dB

30

0.9GHz

1.8GHz

2.4GHz

3GHz

4GHz

5GHz

6GHz

Power Gain Gma, Gms = ƒ(f),

|

S21|² = f (f)

VCE = 3V, IC = 30mA

0

1

2

3

4

GHz

6

f

10

15

20

25

30

35

40

45

dB

55

Gms

Gma

|S21|²

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BFP640E6327 Datasheet(PDF) 6 Page - Infineon Technologies AG

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