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NDB710B Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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NDB710B Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 6 page NDP710.SAM -50 -25 0 25 50 75 100 125 150 175 0.9 0.95 1 1.05 1.1 1.15 T , JUNCTION TEMPERATURE (°C) I = 250µA D J 0.2 0.4 0.6 0.8 1 1.2 1.4 0.01 0.1 1 10 30 V , BODY DIODE FORWARD VOLTAGE (V) V = 0V GS T = 125°C J 25°C -55°C SD 0 40 80 120 160 0 5 10 15 20 Q , GATE CHARGE (nC) g I = 42A D V = 20V DS 80 50 0.1 0.2 0.5 1 2 5 10 20 50 100 200 300 1000 2000 3000 6000 V , DRAIN TO SOURCE VOLTAGE (V) DS C iss f = 1 MHz V = 0V GS C oss C rss G D S VDD R L V V IN OUT V GS DUT R GEN 10% 50% 90% 10% 90% 90% 50% Input, Vin Output, Vout t on toff td(off) t f tr t d(on) Inverted 10% Pulse Width Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. Figure 36. Switching Test Circuit. Figure 12. Switching Waveforms. Typical Electrical Characteristics (continued) |
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Similar Description - NDB710B |
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