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NDB710B Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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NDB710B Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page May 1994 NDP710A / NDP710AE / NDP710B / NDP710BE NDB710A / NDB710AE / NDB710B / NDB710BE N-Channel Enhancement Mode Field Effect Transistor General Description Features _____________________________________________________________________ Absolute Maximum Ratings T C = 25°C unless otherwise noted Symbol Parameter NDP710A NDP710AE NDB710A NDB710AE NDP710B NDP710BE NDB710B NDB710BE Units V DSS Drain-Source Voltage 100 V V DGR Drain-Gate Voltage (R GS < 1 MΩ) 100 V V GSS Gate-Source Voltage - Continuous ±20 V - Nonrepetitive (t P < 50 µs) ±40 V I D Drain Current - Continuous 42 40 A - Pulsed 168 160 A P D Total Power Dissipation @ T C = 25°C 150 W Derate above 25°C 1 W/°C T J,TSTG Operating and Storage Temperature Range -65 to 175 °C T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 275 °C NDP710.SAM These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. 42 and 40A, 100V. R DS(ON) = 0.038 and 0.042Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low R DS(ON). TO-220 and TO-263 (D 2PAK) package for both through hole and surface mount applications. D G S © 1997 Fairchild Semiconductor Corporation |
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