July 1996

NDS8425

Single N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

___________________________________________________________________________________________

Symbol

Parameter

NDS8425

Units

V

DSS

Drain-Source Voltage

20

V

V

GSS

Gate-Source Voltage

8

V

I

D

Drain Current - Continuous

(Note 1a)

± 7.4

A

- Pulsed

± 20

P

D

Maximum Power Dissipation

(Note 1a)

2.5

W

(Note 1b)

1.2

(Note 1c)

1

T

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

(Note 1a)

50

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

25

°C/W

NDS8425 Rev. C

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance and provide

superior switching performance. These devices are particularly

suited for low voltage applications such as notebook computer

power management and other battery powered circuits where

fast switching, low in-line power loss, and resistance to

transients are needed.

7.4 A, 20 V. R

@ V

R

@ V

High density cell design for extremely low R

High power and current handling capability in a widely used

surface mount package.

1

5

6

7

8

4

3

2

© 1997 Fairchild Semiconductor Corporation