NDS8858H datasheet(5/12 Pages) FAIRCHILD

Part #	NDS8858H

Description	Complementry MOSFET Half Bridge

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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NDS8858H Rev. C

0

5

10

15

20

25

0.5

0.75

1

1.25

1.5

1.75

2

I

, DRAIN CURRENT (A)

D

V

= 10V

GS

T = 125°C

J

25°C

-55°C

-20

-16

-12

-8

-4

0

0.5

1

1.5

2

I

, DRAIN CURRENT (A)

D

V

= -10V

GS

T = 125°C

J

25°C

-55°C

-6

-5

-4

-3

-2

-1

-20

-15

-10

-5

0

V

, GATE TO SOURCE VOLTAGE (V)

V

= -10V

DS

GS

T

= -55°C

J

25°C

125°C

1

2

3

4

5

6

0

5

10

15

20

25

V

, GATE TO SOURCE VOLTAGE (V)

V

= 10V

DS

GS

T = -55°C

J

25°C

125°C

Figure 7. N-Channel On-Resistance Variation

with Drain Current and Temperature.

Figure 8. P-Channel On-Resistance Variation

with Drain Current and Temperature

.

Figure 9. N-Channel Transfer

Characteristics.

Figure 10. P-Channel Transfer

Characteristics.

Typical Electrical Characteristics

-50

-25

0

25

50

75

100

125

150

0.6

0.7

0.8

0.9

1

1.1

1.2

T , JUNCTION TEMPERATURE (°C)

J

I = 250µA

D

V

= V

DS

GS

Figure 11. N-Channel Gate Threshold Variation

with Temperature.

-50

-25

0

25

50

75

100

125

150

0.6

0.7

0.8

0.9

1

1.1

1.2

T , JUNCTION TEMPERATURE (°C)

I

= -250µA

D

V

= V

DS

GS

J

Figure 12. P-Channel Gate Threshold Variation

with Temperature.

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