Power MOSFET

IRF630, SiHF630

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

200

0.40

43

7.0

23

Configuration

Single

N-Channel MOSFET

G

D

S

TO-220AB

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

TO-220AB

Lead (Pb)-free

IRF630PbF

SiHF630-E3

SnPb

IRF630

SiHF630

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

200

V

Gate-Source Voltage

± 20

Continuous Drain Current

9.0

A

5.7

36

Linear Derating Factor

0.59

W/°C

250

mJ

9.0

A

7.4

mJ

Maximum Power Dissipation

74

W

dV/dt

5.0

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

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