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AUIRFR5410 Datasheet(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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AUIRFR5410 Datasheet(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
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2 / 10 page  AUIRFR5410 2 www.kersemi.com Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 6.4mH, RG = 25, IAS = -7.8A. (See Figure 12) ISD -7.8A, di/dt 200A/µs, VDD V(BR)DSS, TJ 150°C. Pulse width 300µs; duty cycle 2%.
This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact. Uses IRF9530N data and test conditions. When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994. Ris measured at Tj approximately 90°C. S D G S D G Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage -100 ––– ––– V V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.12 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.205 VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V gfs Forward Transconductance 3.2 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– -25 μA ––– ––– -250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge ––– ––– 58 Qgs Gate-to-Source Charge ––– ––– 8.3 nC Qgd Gate-to-Drain ("Miller") Charge ––– ––– 32 td(on) Turn-On Delay Time ––– 15 ––– tr Rise Time ––– 58 ––– td(off) Turn-Off Delay Time ––– 45 ––– ns tf Fall Time ––– 46 ––– LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 760 ––– Coss Output Capacitance ––– 260 ––– pF Crss Reverse Transfer Capacitance ––– 170 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– -13 (Body Diode) A ISM Pulsed Source Current ––– ––– -52 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– -1.6 V trr Reverse Recovery Time ––– 130 190 ns Qrr Reverse Recovery Charge ––– 650 970 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions VGS = -10V fh VDD = =-50V ID = -8.4A RG = 9.1 TJ = 25°C, IS = -7.8A, VGS = 0V f TJ = 25°C, IF = -8.4A di/dt = 100A/μs fh Conditions VGS = 0V, ID = -250μA Reference to 25°C, ID = -1mA VGS = -10V, ID = -7.8A f VDS = VGS, ID = -250μA VDS = -100V, VGS = 0V VDS = -80V, VGS = 0V, TJ = 150°C MOSFET symbol showing the integral reverse p-n junction diode. VDS = -25V, ID = -7.8A ID = -8.4A VDS = -80V Conditions RD = 6.2 fh VGS = 0V VDS = -25V ƒ = 1.0MHz h VGS = 20V VGS = -20V |
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