IRFR1N60A datasheet(4/7 Pages) KERSEMI

Part #	IRFR1N60A

Description	Power MOSFET

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Manufacturer	KERSEMI [Kersemi Electronic Co., Ltd.]

Direct Link	http://www.kersemi.com

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IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

1

10

100

1000

10000

1

10

100

1000

DS

V

, Drain-to-Source Voltage (V)

A

V

= 0V,

f = 1MHz

C

= C

+ C

, C

SHORTED

C

= C

C

= C

+ C

GS

iss

gs

gd

ds

rss

gd

oss

ds

gd

Ciss

Coss

Crss

0

2

4

6

8

10

12

14

0

4

8

12

16

20

Q , Total Gate Charge (nC)

G

FOR TEST CIRCUIT

SEE FIGURE

I =

D

13

1.4A

V

= 120V

DS

V

= 300V

DS

V

= 480V

DS

0.1

1

10

0.4

0.6

0.8

1.0

1.2

V

,Source-to-Drain Voltage (V)

SD

V

= 0 V

GS

T = 25 C

J

°

T = 150 C

J

°

0.1

1

10

100

10

100

1000

10000

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

T

= 150 C

= 25 C

°

J

C

V

, Drain-to-Source Voltage (V)

DS

10us

100us

1ms

10ms

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IRFR1N60A Datasheet(PDF) 4 Page - Kersemi Electronic Co., Ltd.

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