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SIHFU1N60A Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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SIHFU1N60A Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
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1 / 7 page  www.kersemi.com 1 Power MOSFET IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • Power Factor Correction TYPICAL SMPS TOPOLOGIES • Low Power Single Transistor Flyback Note a. See device orientation. PRODUCT SUMMARY VDS (V) 600 RDS(on) (Max.) (Ω)VGS = 10 V 7.0 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 8.1 Configuration Single N-Channel MOSFET G D S DPAK (TO-252) IPAK (TO-251) Available RoHS* COMPLIANT ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free IRFR1N60APbF IRFR1N60ATRLPbFa IRFR1N60ATRPbFa IRFR1N60ATRRPbFa IRFU1N60APbF SiHFR1N60A-E3 SiHFR1N60ATL-E3a SiHFR1N60AT-E3a SiHFR1N60ATR-E3a SiHFU1N60A-E3 SnPb IRFR1N60A - IRFR1N60ATRa - IRFU1N60A SiHFR1N60A - SiHFR1N60ATa - SiHFU1N60A ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 1.4 A TC = 100 °C 0.89 Pulsed Drain Currenta IDM 5.6 Linear Derating Factor 0.28 W/°C Single Pulse Avalanche Energyb EAS 93 mJ Repetitive Avalanche Currenta IAR 1.4 A Repetitive Avalanche Energya EAR 3.6 mJ Maximum Power Dissipation TC = 25 °C PD 36 W Peak Diode Recovery dV/dtc dV/dt 3.8 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d |
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