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IRFR9N20DPBF Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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IRFR9N20DPBF Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
1 / 10 page www.kersemi.com 1 12/06/04 IRFR9N20DPbF IRFU9N20DPbF SMPS MOSFET HEXFET® Power MOSFET VDSS RDS(on) max ID 200V 0.38 Ω 9.4A Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.4 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.7 A IDM Pulsed Drain Current 38 PD @TC = 25°C Power Dissipation 86 W Linear Derating Factor 0.57 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings D-Pak IRFR9N20D I-Pak IRFU9N20D PD - 95376A l High frequency DC-DC converters l Lead-Free Benefits Applications l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current |
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