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IRFB16N60LPBF Datasheet(PDF) 6 Page - Kersemi Electronic Co., Ltd. |
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IRFB16N60LPBF Datasheet(HTML) 6 Page - Kersemi Electronic Co., Ltd. |
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6 / 7 page  6 IRFB16N60L, SiHFB16N60L Fig. 13 - Threshold Voltage vs. Temperature Fig. 14a - Maximum Avalanche Energy vs. Drain Current Fig. 14b - Unclamped Inductive Test Circuit Fig. 14c - Unclamped Inductive Waveforms Fig. 15a - Basic Gate Charge Waveform Fig. 15b - Gate Charge Test Circuit -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 ID = 250μA 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) 0 100 200 300 400 500 600 ID TOP 7.2A 10A BOTTOM 16A A R G IAS 0.01 Ω tp D.U.T. L VDS + - VDD Driver 15 V 20 V IAS VDS tp Q GS Q GD Q G VG Charge V GS D.U.T. 3 mA V GS V DS I G I D 0.3 µF 0.2 µF 50 k Ω 12 V Current regulator Current sampling resistors Same type as D.U.T. + - www.kersemi.com |
Similar Part No. - IRFB16N60LPBF |
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Similar Description - IRFB16N60LPBF |
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