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SIHFU9210-E3 Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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SIHFU9210-E3 Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
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1 / 7 page  www.kersemi.com 1 Power MOSFET IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9210/SiHFR9210) • Straight Lead (IRFU9210/SiHFU9210) • Available in Tape and Reel • P-Channel • Fast Switching • Lead (Pb)-free Available DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. Note a. See device orientation. PRODUCT SUMMARY VDS (V) - 200 RDS(on) (Ω)VGS = - 10 V 3.0 Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration Single S G D P-Channel MOSFET DPAK (TO-252) IPAK (TO-251) Available RoHS* COMPLIANT ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free IRFR9210PbF IRFR9210TRPbFa - IRFU9210PbF SiHFR9210-E3 SiHFR9210T-E3a - SiHFU9210-E3 SnPb IRFR9210 IRFR9210TRa IRFR9210TRLa IRFU9210 SiHFR9210 SiHFR9210Ta SiHFR9210TLa SiHFU9210 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS - 200 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C ID - 1.9 A TC = 100 °C - 1.2 Pulsed Drain Currenta IDM - 7.6 Linear Derating Factor 0.20 W/°C Linear Derating Factor (PCB Mount)e 0.020 Single Pulse Avalanche Energyb EAS 300 mJ Repetitive Avalanche Currenta IAR - 1.9 A Repetitive Avalanche Energya EAR 2.5 mJ Maximum Power Dissipation TC = 25 °C PD 25 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 2.5 Peak Diode Recovery dV/dtc dV/dt - 5.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 260d |
Similar Part No. - SIHFU9210-E3 |
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Similar Description - SIHFU9210-E3 |
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