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BC640 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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BC640 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 5 page  © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com BC640 Rev. C3 1 March 2009 BC640 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC639 Absolute Maximum Ratings T a = 25°C unless otherwise noted Electrical Characteristics T a = 25°C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage at RBE=1KΩ -100 V VCES Collector-Emitter Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A ICP Peak Collector Current -1.5 A IB Base Current -100 mA PC Collector Power Dissipation 1 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -80 V ICBO Collector Cut-off Current VCB= -30V, IE=0 -0.1 μA IEBO Emitter Cut-off Current VEB= -5V, IC=0 -10 μA hFE1 hFE2 hFE3 DC Current Gain VCE= -2V, IC= -5mA VCE= -2V, IC= -150mA VCE= -2V, IC= -500mA 25 40 25 160 VCE (sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.5 V VBE (on) Base-Emitter On Voltage VCE= -2V, IC= -500mA -1 V fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=50MHz 100 MHz 1. Emitter 2. Collector 3. Base TO-92 1 |
Similar Part No. - BC640_09 |
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Similar Description - BC640_09 |
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