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NDT452P Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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NDT452P Datasheet(HTML) 5 Page - Fairchild Semiconductor |
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5 / 10 page  NDT452P Rev. C3 Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. Typical Electrical Characteristics (continued) -50 -25 0 25 50 75 100 125 150 0.85 0.9 0.95 1 1.05 1.1 T , JUNCTION TEMPERATURE (°C) I = -250µA D J -2 -1.6 -1.2 -0.8 -0.4 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 V , BODY DIODE FORWARD VOLTAGE (V) T = 125°C J 25°C -55°C V = 0V GS SD 0 4 8 12 16 0 2 4 6 8 10 Q , GATE CHARGE (nC) g I = -3A V = -10V D DS 0.1 0.2 0.5 1 2 5 10 20 100 200 300 500 700 1000 -V , DRAIN TO SOURCE VOLTAGE (V) DS C iss f = 1 MHz V = 0V GS C oss C rss D S -VDD R L V OUT V GS DUT V IN R GEN G 10% 50% 90% 10% 90% 90% 50% V IN V OUT on off d(off) f r d(on) t t t t t t INVERTED 10% PULSE WIDTH |
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Similar Description - NDT452P |
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