© Semiconductor Components Industries, LLC, 2008

September, 2008 − Rev. 4

1

Publication Order Number:

2N6284/D

2N6284 (NPN); 2N6286,

2N6287 (PNP)

Preferred Device

Darlington Complementary

Silicon Power Transistors

These packages are designed for general−purpose amplifier and

low−frequency switching applications.

Features

= 4000 (Typ) − 2N6287

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

2N6286

2N6284/87

80

100

Vdc

Collector−Base Voltage

2N6286

2N6284/87

80

100

Vdc

Emitter−Base Voltage

5.0

Vdc

Collector Current − Continuous

Peak

20

40

Adc

Base Current

0.5

Adc

Derate above 25°C

160

0.915

W

W/°C

Operating and Storage Temperature

Range

−65 to + 200

°C

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

1.09

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

20 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

100 VOLTS, 160 WATTS

TO−204AA (TO−3)

CASE 1−07

STYLE 1

MARKING DIAGRAM

2N628x

= Device Code

x = 4, 6 or 7

G= Pb−Free Package

A

= Location Code

YY

= Year

WW

= Work Week

MEX

= Country of Orgin

2N628xG

AYYWW

MEX

Device

Package

Shipping

ORDERING INFORMATION

2N6284

TO−3

100 Units/Tray

2N6284G

TO−3

(Pb−Free)

100 Units/Tray

2N6286

TO−3

100 Units/Tray

2N6286G

TO−3

(Pb−Free)

100 Units/Tray

2N6287

TO−3

100 Units/Tray

2N6287G

TO−3

(Pb−Free)

100 Units/Tray

COLLECTOR

CASE

BASE

1

EMITTER 2

2

1