SQ9945BEY-T1-GE3 datasheet(3/9 Pages) VISHAY

Part #	SQ9945BEY-T1-GE3

Description	Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQ9945BEY

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Vishay Siliconix

S12-1522-Rev. C, 25-Jun-12

3

Document Number: 71504

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

4

8

12

16

20

0

1234

5

VGS =10 V thru 5V

VGS =4V

VGS =3V

V

DS - Drain-to-Source Voltage (V)

0

0.05

0.10

0.15

0.20

0.25

04

8

12

16

20

VGS =10V

VGS =4.5 V

I

D - Drain Current (A)

0

2

4

6

8

10

0

2468

10

ID =4.3 A

VDS =30V

Q

g - Total Gate Charge (nC)

0

4

8

12

16

20

02

4

6

8

10

TC = - 55 °C

TC = 125 °C

TC = 25 °C

V

GS - Gate-to-Source Voltage (V)

Crss

0

100

200

300

400

500

600

0

102030

405060

Ciss

Coss

V

DS - Drain-to-Source Voltage (V)

0.5

0.9

1.3

1.7

2.1

2.5

- 50

- 25

0

25

50

75

100

125

150

175

ID =4.3 A

VGS =10V

VGS =4.5 V

T

J - Junction Temperature (°C)

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