NCP1230D100R2G datasheet(6/21 Pages) ONSEMI

Part #	NCP1230D100R2G

Description	Low-Standby Power High Performance PWM

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Manufacturer	ONSEMI [ON Semiconductor]

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NCP1230

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ELECTRICAL CHARACTERISTICS (For typical values TJ = 25°C, for min/max values TJ = −40°C to +125°C, Max TJ = 150°C,

VCC = 13 V, VPIN8 = 30 V unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

Internal Oscillator

Oscillation Frequency, 65 kHz Version (Vfb = 2.5 V)

Tj = 25°C

Tj = 0°C to +125°C

Tj = −40°C to +125°C

fOSC

−

60

58

55

65

−

70

72

kHz

Oscillation Frequency, 100 kHz Version

Tj = 25°C

Tj = 0°C to +125°C

Tj = −40°C to +125°C

fOSC

−

93

90

85

100

−

107

110

kHz

Oscillation Frequency, 133 kHz Version

Tj = 25°C

Tj = 0°C to +125°C

Tj = −40°C to +125°C

fOSC

−

123

120

113

133

−

143

146

kHz

Internal Modulation Swing, in Percentage of Fsw (Vfb = 2.5 V) (Note 4)

−

"6.4

−

%

Internal Swing Period (Note 4)

−

5.0

−

ms

Maximum Duty−Cycle (CS = 0, Vfb = 2.5 V)

Dmax

−

75

80

85

%

Internal Ramp Compensation

Internal Resistor (Note 4)

Rup

3

9.0

18

36

kW

Ramp Compensation Sawtooth Amplitude

−

3

−

2.3

−

Vpp

Feedback Section

Opto Current Source (Vfb = 0.75 V)

−

2

200

235

270

mA

Pin 3 to Current Setpoint Division Ratio (Note 4)

Iratio

−

2.8

−

Protection

Timeout before Validating Short−Circuit or PFC VCC (Note 4)

TDEL

−

125

−

ms

Latch−Off Level

Vlatch

3

2.7

3.0

3.3

V

4. Verified by Design.

Figure 3. VCC(OFF) Threshold vs. Temperature

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 4. VCC(min) Threshold vs. Temperature

7.0

7.2

7.4

7.6

7.8

8.0

TJ, JUNCTION TEMPERATURE (°C)

125

100

75

50

25

0

−25

−50

150

VPIN8 = 30 V

TJ, JUNCTION TEMPERATURE (°C)

125

100

75

50

25

0

−25

−50

12.0

12.2

12.4

12.6

12.8

13.0

150

VCC = 0 V

VPIN8 = 30 V

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