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NCP5351MNR2G Datasheet(PDF) 6 Page - ON Semiconductor |
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NCP5351MNR2G Datasheet(HTML) 6 Page - ON Semiconductor |
6 / 14 page NCP5351 http://onsemi.com 6 ELECTRICAL CHARACTERISTICS (continued) (0°C < TJ < 125°C; VS = 5.0 V; 4.0 V < VBST < 25 V; VEN = VS, CLOAD = 5.7 nF; unless otherwise noted.) Parameter Test Conditions Min Typ Max Unit AC OPERATING SPECIFICATIONS HIGH−SIDE DRIVER Rise Time VBST − VDRN = 5.0 V, TJ = 125°C − 8.0 16 ns Fall Time VBST − VDRN = 5.0 V, TJ = 125°C − 14 21 ns Propagation Delay Time, TG Going High (Nonoverlap Time) VBST − VDRN = 5.0 V, TJ = 125°C 30 45 60 ns Propagation Delay Time, TG Going Low VBST − VDRN = 5.0 V, TJ = 125°C − 18 37 ns LOW−SIDE DRIVER Rise Time TJ = 125°C − 10 15 ns Fall Time TJ = 125°C − 12 20 ns Propagation Delay Time, BG Going High (Non−Overlap Time) TJ = 125°C 25 55 80 ns Propagation Delay Time, BG Going Low TJ = 125°C − 10 18 ns UNDERVOLTAGE LOCKOUT VS Rising EN = VS, CO = 0 V, dVS/dt > 1.0 V/ms, from 4.0 V to 4.5 V, time to BG > 1.0 V, TJ = 125°C − 30 − ms VS Falling EN = VS, CO = 0 V, dVS/dt < −1.0 V/ms, from 4.5 V to 4.0 V, time to BG < 1.0 V, TJ = 125°C − 500 − ms |
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