NTJD5121NT2G datasheet(4/5 Pages) ONSEMI

Part #	NTJD5121NT2G

Description	Power MOSFET 60 V, 295 mA, Dual N?묬hannel with ESD

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NTJD5121N

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TYPICAL PERFORMANCE CURVES

(TJ = 25°C unless otherwise noted)

0

10

20

30

40

0

4

8

12

16

20

Figure 7. Capacitance Variation

DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 25°C

VGS = 0 V

Coss

Ciss

Crss

0

1

2

3

4

5

0

0.2

0.4

0.6

0.8

1

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

Qg, TOTAL GATE CHARGE (nC)

ID = 0.2 A

TJ = 25°C

VDD = 25 V

0.01

0.1

1

0.4

0.6

0.8

1

1.2

Figure 9. Diode Forward Voltage vs. Current

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

VGS = 0 V

TJ = 25°C

TJ = 85°C

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