FDMC86106LZ datasheet(4/7 Pages) FAIRCHILD

Part #	FDMC86106LZ

Description	N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 m廓

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FDMC86106LZ Rev.C1

Figure 7.

01

23

45

0

2

4

6

8

10

ID = 3.3 A

VDD = 75 V

VDD = 25 V

Qg, GATE CHARGE (nC)

VDD = 50 V

Gate Charge Characteristics

Figure 8.

0.1

1

10

100

1

10

100

1000

f = 1 MHz

VGS = 0 V

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

Capacitance vs Drain

to Source Voltage

Figure9.

0.001

0.01

0.1

1

10

1

2

3

4

5

6

7

8

9

10

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

t

AV, TIME IN AVALANCHE (ms)

UnclampedInductive

Switching Capability

Figure 10.

0

4

8

12

16

20

24

28

32

36

10

-9

10

-8

10

-7

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

VGS = 0 V

TJ = 125 oC

TJ = 25 oC

V

GS, GATE TO SOURCE VOLTAGE (V)

Gate Leakage Current vs Gate to

Source Voltage

Figure11. MaximumContinuousDrain

Current vs Case Temperature

25

50

75

100

125

150

0

2

4

6

8

10

Limited by package

VGS = 4.5 V

RθJC = 6.5

o

C/W

VGS = 10 V

T

C

, CASE TEMPERATURE (

o

C

)

Figure 12.

0.1

1

10

100

400

0.005

0.01

0.1

1

10

20

100 ms

10 s

10 ms

100 us

DC

1 s

1 ms

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE

TJ = MAX RATED

RθJA = 125

oC/W

TA = 25

oC

Forward Bias Safe

Operating Area

Typical Characteristics T

J = 25 °C unless otherwise noted

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