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AUIRFZ48ZS Datasheet(PDF) 1 Page - International Rectifier |
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AUIRFZ48ZS Datasheet(HTML) 1 Page - International Rectifier |
1 / 14 page 06/21/11 www.irf.com 1 AUIRFZ48Z AUIRFZ48ZS HEXFET® Power MOSFET AUTOMOTIVE GRADE PD - 97612A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features com- bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. G D S Gate Drain Source D2Pak AUIRFZ48ZS S D G D TO-220AB AUIRFZ48Z S D G D S D G Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ V(BR)DSS 55V RDS(on) max. 11mΩ ID 61A Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy (Thermally Limited) d mJ EAS (tested) Single Pulse Avalanche Energy Tested Value i IAR Avalanche Current c A EAR Repetitive Avalanche Energy h mJ dv/dt Peak Diode Recovery dv/dt e V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case k ––– 1.64 °C/W RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– RθJA Junction-to-Ambient ––– 62 RθJA Junction-to-Ambient (PCB Mount, steady state) j ––– 40 10 lbf•in (1.1N•m) 91 0.61 ± 20 73 120 See Fig.12a,12b,15,16 300 -55 to + 175 7.2 Max. 61 43 240 |
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