Electronic Components Datasheet Search |
|
MTB6N60 Datasheet(PDF) 2 Page - Motorola, Inc |
|
MTB6N60 Datasheet(HTML) 2 Page - Motorola, Inc |
2 / 8 page MTB6N60E1 2 Motorola TMOS Power MOSFET Transistor Device Data ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS 600 — — 689 — — Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 600 Vdc, VGS = 0 Vdc) (VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS — — — — 1.0 50 µAdc Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS — — 100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) VGS(th) 2.0 — 3.0 7.1 4.0 — Vdc mV/ °C Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 3.0 Adc) RDS(on) — 0.94 1.2 Ohms Drain–to–Source On–Voltage (VGS = 10 Vdc, ID = 6.0 Adc) (VGS = 10 Vdc, ID = 3.0 Adc, TJ = 125°C) VDS(on) — — 6.0 — 8.6 7.6 Vdc Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc) gFS 2.0 5.5 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vdc V 0 Vdc Ciss — 1498 2100 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss — 158 217 Reverse Transfer Capacitance f = 1.0 MHz) Crss — 29 56 SWITCHING CHARACTERISTICS (2) Turn–On Delay Time (V 300 Vd I 6 0 Ad td(on) — 14 30 ns Rise Time (VDS = 300 Vdc, ID = 6.0 Adc, VGS =10Vdc tr — 19 40 Turn–Off Delay Time VGS = 10 Vdc, RG = 9.1 Ω) td(off) — 40 80 Fall Time G ) tf — 26 50 Gate Charge (V 300 Vd I 6 0 Ad QT — 35.5 50 nC (VDS = 300 Vdc, ID = 6.0 Adc, Q1 — 8.1 — ( DS , D , VGS = 10 Vdc) Q2 — 14.1 — Q3 — 15.8 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (1) (IS = 6.0 Adc, VGS = 0 Vdc) (IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD — — 0.83 0.72 1.5 — Vdc Reverse Recovery Time (I 6 0 Ad V 0 Vd trr — 266 — ns (IS = 6.0 Adc, VGS = 0 Vdc, ta — 166 — ( S , GS , dIS/dt = 100 A/µs) tb — 100 — Reverse Recovery Stored Charge QRR — 2.5 — µC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 ″ from package to center of die) LD — 4.5 — nH Internal Source Inductance (Measured from the source lead 0.25 ″ from package to source bond pad) LS — 7.5 — nH (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. |
Similar Part No. - MTB6N60 |
|
Similar Description - MTB6N60 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |