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MMBT2369 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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MMBT2369 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page PN2369A MMPQ2369 MMBT2369A NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units PN2369A MMBT2369A* MMPQ2369 PD Total Device Dissipation Derate above 25 °C 350 2.8 225 1.8 1,000 8.0 mW mW/ °C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 357 556 125 240 °C/W °C/W °C/W C B E TO-92 C B E SOT-23 Mark: 1S C C C C C C C C SOIC-16 E B E B E B E B *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." Discrete POWER & Signal Technologies © 1997 Fairchild Semiconductor Corporation |
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