PN2369A

MMPQ2369

MMBT2369A

NPN Switching Transistor

This device is designed for high speed saturation switching at collector

currents of 10 mA to 100 mA. Sourced from Process 21.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

15

V

Collector-Base Voltage

40

V

Emitter-Base Voltage

4.5

V

Collector Current - Continuous

200

mA

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

PN2369A

MMBT2369A*

MMPQ2369

Total Device Dissipation

Derate above 25

°C

350

2.8

225

1.8

1,000

8.0

mW

mW/

°C

Thermal Resistance, Junction to Case

125

°C/W

Thermal Resistance, Junction to Ambient

Effective 4 Die

Each Die

357

556

125

240

°C/W

°C/W

°C/W

C

B

E

TO-92

C

B

E

SOT-23

Mark: 1S

C

C

C

C

C

C

C

C

SOIC-16

E

B

E

B

E

B

E

B

Discrete POWER & Signal

Technologies

© 1997 Fairchild Semiconductor Corporation