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NMT2907 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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NMT2907 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page Electrical Characteristics T A = 25°C unless otherwise noted OFF CHARACTERISTICS ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 50 mA, VCE = 20 V, f = 100 MHz 200 MHz Cobo Output Capacitance VCB = 10 V, IE = 0, f = 100 kHz 8.0 pF Cibo Input Capacitance VEB = 2.0 V, IC = 0, f = 100 kHz 30 pF SWITCHING CHARACTERISTICS ton Turn-on Time VCC = 30 V, IC = 150 mA, 45 ns td Delay Time IB1 = 15 mA 10 ns tr Rise Time 40 ns toff Turn-off Time VCC = 6.0 V, IC = 150 mA 100 ns ts Storage Time IB1 = IB2 = 15 mA 80 ns tf Fall Time 30 ns Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 060V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, I E = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, I C = 0 5.0 V IB Base Cutoff Current VCB = 30 V, VEB = 0.5 V 50 nA ICEX Collector Cutoff Current VCE = 30 V, VBE = 0.5 V 50 nA ICBO Collector Cutoff Current VCB = 50 V, IE = 0 VCB = 50 V, IE = 0, TA = 150 °C 0.02 20 µA µA hFE DC Current Gain IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V* IC = 500 mA, VCE = 10 V* 75 100 100 100 50 300 VCE(sat) Collector-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.4 1.6 V V VBE(sat) Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA* IC = 500 mA, IB = 50 mA 1.3 2.6 V V PNP General Purpose Amplifier (continued) *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. Spice Model PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2 Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7p Itf=.65 Vtf=5 Xtf=1.7 Rb=10) |
Similar Part No. - NMT2907 |
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Similar Description - NMT2907 |
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