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DAC8512GBC Datasheet(PDF) 3 Page - Analog Devices |
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DAC8512GBC Datasheet(HTML) 3 Page - Analog Devices |
3 / 20 page REV. A –3– DAC8512 WAFER TEST LIMITS (@ V DD = +5.0 V 5%, TA = +25 C, applies to part number DAC8512GBC only, unless otherwise noted) Parameter Symbol Condition Min Typ Max Units STATIC PERFORMANCE Relative Accuracy INL –2 ±3/4 +2 LSB Differential Nonlinearity DNL No Missing Codes –1 ±0.7 +1 LSB Zero-Scale Error VZSE Data = 000H +1/2 +3 LSB Full-Scale Voltage VFS Data = FFFH 4.085 4.095 4.105 V LOGIC INPUTS Logic Input Low Voltage VIL 0.8 V Logic Input High Voltage VIH 2.4 V Input Leakage Current IIL 10 µA SUPPLY CHARACTERISTICS Positive Supply Current IDD VIH = 2.4 V, VIL= 0.8 V, No Load 1.5 2.5 mA VDD = 5 V, VIL = 0 V, No Load 0.5 1 mA Power Dissipation PDISS VIH = 2.4 V, VIL = 0.8 V, No Load 7.5 12.5 mW VDD = 5 V, VIL = 0 V, No Load 2.5 5 mW Power Supply Sensitivity PSS ∆V DD = ±5% 0.002 0.004 %/% NOTE Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing. ABSOLUTE MAXIMUM RATINGS* VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +10 V Logic Inputs to GND . . . . . . . . . . . . . . . –0.3 V, VDD + 0.3 V VOUT to GND . . . . . . . . . . . . . . . . . . . . . –0.3 V, VDD + 0.3 V IOUT Short Circuit to GND . . . . . . . . . . . . . . . . . . . . . . 50 mA Package Power Dissipation . . . . . . . . . . . . . . (TJ max – TA)/ θ JA Thermal Resistance θ JA 8-Pin Plastic DIP Package (P) . . . . . . . . . . . . . . . . 103 °C/W 8-Lead SOIC Package (S) . . . . . . . . . . . . . . . . . . . 158 °C/W Maximum Junction Temperature (TJ max) . . . . . . . . . +150 °C Operating Temperature Range . . . . . . . . . . . . . –40 °C to +85°C Storage Temperature Range . . . . . . . . . . . . . –65 °C to +150°C Lead Temperature (Soldering, 10 secs) . . . . . . . . . . . . +300 °C *Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability . WARNING! ESD SENSITIVE DEVICE CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the DAC8512 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. ORDERING GUIDE INL Temperature Package Package Model (LSB) Range Description Option DAC8512EP ±1 –40 °C to +85°C 8-Pin P-DIP N-8 DAC8512FP ±2 –40 °C to +85°C 8-Pin P-DIP N-8 DAC8512FS ±2 –40 °C to +85°C 8-Lead SOIC SO-8 DAC8512GBC ±2 +25 °C Dice |
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