2

RF Device Data

Freescale Semiconductor

MRF6VP2600HR6

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2 (Minimum)

Machine Model (per EIA/JESD22--A115)

A (Minimum)

Charge Device Model (per JESD22--C101)

IV (Minimum)

Characteristic

Symbol

Min

Typ

Max

Unit

Gate--Source Leakage Current

—

—

10

μAdc

Drain--Source Breakdown Voltage

110

—

—

Vdc

Zero Gate Voltage Drain Leakage Current

—

—

50

μAdc

Zero Gate Voltage Drain Leakage Current

—

—

2.5

mA

On Characteristics

1

1.65

3

Vdc

1.5

2.7

3.5

Vdc

—

0.25

—

Vdc

Reverse Transfer Capacitance

—

1.7

—

pF

Output Capacitance

—

101

—

pF

Input Capacitance

—

287

—

pF

OFDM Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ ±4MHz Offset.

Power Gain

24

25

27

dB

Drain Efficiency

27

28.5

—

%

Adjacent Channel Power Ratio

ACPR

—

--61

--59

dBc

Input Return Loss

IRL

—

--18

--9

dB

Power Gain

—

22

—

dB

Drain Efficiency

—

68

—

%

Input Return Loss

IRL

—

--15

—

dB

CW

Power Gain

—

24.5

—

dB

Drain Efficiency

—

74

—

%

Input Return Loss

IRL

—

--5

—

dB

1. Each side of device measured separately.

2. Measurement made with device in push--pull configuration.