MRF6VP2600HR6

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistor

N--Channel Enhancement--Mode Lateral MOSFET

Designed primarily for wideband applications with frequencies up to 500 MHz.

Device is unmatched and is suitable for use in broadcast applications.

Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF.

Power Gain — 25 dB

Drain Efficiency — 28.5%

ACPR @ 4 MHz Offset — --61 dBc @ 4 kHz Bandwidth

Cycle = 20%

Power Gain — 25.3 dB

Drain Efficiency — 59%

• Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak

Power, Pulse Width = 100 μsec, Duty Cycle = 20%

Features

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• CW Operation Capability with Adequate Cooling

• Integrated ESD Protection

• Designed for Push--Pull Operation

• Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

• RoHS Compliant

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

--0.5, +110

Vdc

Gate--Source Voltage

--6.0, +10

Vdc

Storage Temperature Range

-- 65 to +150

°C

Case Operating Temperature

150

°C

225

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

0.20

0.14

0.16

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Document Number: MRF6VP2600H

Rev. 5.1, 7/2010

Freescale Semiconductor

Technical Data

MRF6VP2600HR6

2--500 MHz, 600 W, 50 V

LATERAL N--CHANNEL

BROADBAND

RF POWER MOSFET

CASE 375D--05, STYLE 1

NI--1230

PART IS PUSH--PULL

Figure 1. Pin Connections

(Top View)

31

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