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BQ27741-G1 Datasheet(PDF) 9 Page - Texas Instruments |
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BQ27741-G1 Datasheet(HTML) 9 Page - Texas Instruments |
9 / 38 page bq27741-G1 www.ti.com SLUSBF2A – JULY 2013 – REVISED SEPTEMBER 2013 Integrating ADC (Coulomb Counter) Characteristics TA = –40°C to 85°C, 2.4 V < VREG25 < 2.6 V; typical values at TA = 25°C and VREG25 = 2.5 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VSR_IN Input voltage range, VSRN and VSRP VSR = VSRN – VSRP VVPWR – 0.125 VVPWR + 0.125 V tSR_CONV Conversion time Single conversion 1 s Resolution 14 15 bits VSR_OS Input offset 10 μV INL Integral nonlinearity error ±0.007 ±0.034 %FSR ZSR_IN Effective input resistance(1) 7 M Ω ISR_LKG Input leakage current(1) 0.3 μA (1) Assured by design. Not production tested. ADC (Temperature and Cell Voltage) Characteristics TA = –40°C to 85°C, 2.4 V < VREG25 < 2.6 V; typical values at TA = 25°C and VREG25 = 2.5 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VADC_IN Input voltage range (VBAT channel) VSS – 0.125 5 V Input voltage range (other channels) VSS – 0.125 1 V tADC_CONV Conversion time 125 ms Resolution 14 15 bits VADC_OS Input offset 1 mV ZADC1 Effective input resistance (TS) (1) 55 M Ω Not measuring cell voltage 55 M Ω ZADC2 Effective input resistance (BAT)(1) Measuring cell voltage 100 k Ω IADC_LKG Input leakage current(1) 0.3 μA (1) Assured by design. Not production tested. Data Flash Memory Characteristics TA = –40°C to 85°C, 2.4 V < VREG25 < 2.6 V; typical values at TA = 25°C and VREG25 = 2.5 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tDR Data retention(1) 10 years Flash programming write-cycles (1) 20,000 cycles tWORDPROG Word programming time(1) 2 ms ICCPROG Flash-write supply current(1) 5 10 mA (1) Assured by design. Not production tested. Copyright © 2013, Texas Instruments Incorporated Submit Documentation Feedback 9 Product Folder Links: bq27741-G1 |
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