Electronic Components Datasheet Search |
|
MTD1N50E Datasheet(PDF) 2 Page - Motorola, Inc |
|
MTD1N50E Datasheet(HTML) 2 Page - Motorola, Inc |
2 / 10 page MTD1N50E 2 Motorola TMOS Power MOSFET Transistor Device Data ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 µAdc) Temperature Coefficient (Positive) V(BR)DSS 500 — — 480 — — Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 500 Vdc, VGS = 0 Vdc) (VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS — — — — 10 100 µAdc Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS — — 100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) VGS(th) 2.0 — 3.2 6.0 4.0 — Vdc mV/ °C Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 0.5 Adc) RDS(on) — 4.3 5.0 Ohm Drain–Source On–Voltage (VGS = 10 Vdc) (ID = 1.0 Adc) (ID = 0.5 Adc, TJ = 125°C) VDS(on) — — 4.5 — 6.0 5.3 Vdc Forward Transconductance (VDS = Vdc, ID = 0.5 Adc) gFS 0.5 0.9 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 10 Vdc, f = 1.0 MHz) Ciss — 215 315 pF Output Capacitance (VDS = 25 Vdc, VGS = 10 Vdc, f = 1.0 MHz) Coss — 30.2 42 Reverse Transfer Capacitance f = 1.0 MHz) Crss — 6.7 12 SWITCHING CHARACTERISTICS (2) Turn–On Delay Time (VDD = 250 Vdc, ID = 1.0 Adc, VGS = 10 Vdc, RG = 9.1 Ω) td(on) — 8.0 20 ns Rise Time (VDD = 250 Vdc, ID = 1.0 Adc, VGS = 10 Vdc, RG = 9.1 Ω) tr — 9.0 10 Turn–Off Delay Time VGS = 10 Vdc, RG = 9.1 Ω) td(off) — 14 30 Fall Time G = 9.1 Ω) tf — 17 30 Gate Charge (See Figure 8) (VDS = 400 Vdc, ID = 1.0 Adc, VGS = 10 Vdc) QT — 7.4 9.0 nC (See Figure 8) (VDS = 400 Vdc, ID = 1.0 Adc, VGS = 10 Vdc) Q1 — 1.6 — (VDS = 400 Vdc, ID = 1.0 Adc, VGS = 10 Vdc) Q2 — 3.8 — Q3 — 5.0 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (1) (IS = 1.0 Adc, VGS = 0 Vdc) (IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD — — 0.81 0.68 1.2 — Vdc Reverse Recovery Time (See Figure 14) (IS = 1.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) trr — 141 — ns (See Figure 14) (IS = 1.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) ta — 82 — (IS = 1.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) tb — 58.5 — Reverse Recovery Stored Charge QRR — 0.65 — µC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25 ″ from package to center of die) LD — — 3.5 4.5 — — nH Internal Source Inductance (Measured from the source lead 0.25 ″ from package to source bond pad) LS — 7.5 — nH (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. |
Similar Part No. - MTD1N50E |
|
Similar Description - MTD1N50E |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |