LM828

SNOS035D – MARCH 2010 – REVISED MAY 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

Supply Voltage (V+ to GND, or GND to OUT)

5.8V

V+ and OUT Continuous Output Current

50 mA

1 sec.

(4)

240 mW

(4)

150°C

(4)

300°C/W

Operating Junction Temperature Range

−40°C to 85°C

Storage Temperature Range

−65°C to +150°C

Lead Temp. (Soldering, 10 seconds)

300°C

2kV

(1)

Absolute maximum ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when

operating the device beyond its rated operating conditions.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and

specifications.

(3)

OUT may be shorted to GND for one second without damage. However, shorting OUT to V+ may damage the device and should be

avoided. Also, for temperatures above 85°C, OUT must not be shorted to GND or V+, or the device may be damaged.

(4)

(5)

The human body model is a 100 pF capacitor discharged through a 1.5 k

Ω resistor into each pin.

Electrical Characteristics

(1)

Symbol

Parameter

Condition

Min

Typ

Max

Units

V+

Supply Voltage

1.8

5.5

V

Supply Current

No Load

40

75

µA

115

20

65

Ω

Internal

12

24

56

kHz

Measured at CAP+

6

12

28

kHz

Power Efficiency

97

%

Voltage Conversion Efficiency

No Load

95

99.96

%

(1)

resistance, reduce output voltage and efficiency.

(2)

Specified output resistance includes internal switch resistance and capacitor ESR. See the details in the application information.

(3)

2

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