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LM828M5X Datasheet(PDF) 2 Page - Texas Instruments |
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LM828M5X Datasheet(HTML) 2 Page - Texas Instruments |
2 / 15 page LM828 SNOS035D – MARCH 2010 – REVISED MAY 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) Supply Voltage (V+ to GND, or GND to OUT) 5.8V V+ and OUT Continuous Output Current 50 mA Output Short-Circuit Duration to GND(3) 1 sec. Continuous Power Dissipation (TA = 25°C) (4) 240 mW TJMax (4) 150°C θJA (4) 300°C/W Operating Junction Temperature Range −40°C to 85°C Storage Temperature Range −65°C to +150°C Lead Temp. (Soldering, 10 seconds) 300°C ESD Rating(5) 2kV (1) Absolute maximum ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when operating the device beyond its rated operating conditions. (2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. (3) OUT may be shorted to GND for one second without damage. However, shorting OUT to V+ may damage the device and should be avoided. Also, for temperatures above 85°C, OUT must not be shorted to GND or V+, or the device may be damaged. (4) The maximum allowable power dissipation is calculated by using PDMax = (TJMax − TA)/θJA, where TJMax is the maximum junction temperature, TA is the ambient temperature, and θJA is the junction-to-ambient thermal resistance of the package. (5) The human body model is a 100 pF capacitor discharged through a 1.5 k Ω resistor into each pin. Electrical Characteristics Limits in standard typeface are for TJ = 25°C, and limits in boldface type apply over the full operating temperature range. Unless otherwise specified: V+ = 5V, C1 = C2 = 10 μF. (1) Symbol Parameter Condition Min Typ Max Units V+ Supply Voltage RL =10kΩ 1.8 5.5 V IQ Supply Current No Load 40 75 µA 115 ROUT Output Resistance(2) IL = 5 mA 20 65 Ω fOSC Oscillator Frequency(3) Internal 12 24 56 kHz fSW Switching Frequency(3) Measured at CAP+ 6 12 28 kHz PEFF Power Efficiency IL = 5 mA 97 % VOEFF Voltage Conversion Efficiency No Load 95 99.96 % (1) In the test circuit, capacitors C1 and C2 are 10 µF, 0.3Ω maximum ESR capacitors. Capacitors with higher ESR will increase output resistance, reduce output voltage and efficiency. (2) Specified output resistance includes internal switch resistance and capacitor ESR. See the details in the application information. (3) The output switches operate at one half of the oscillator frequency, fOSC = 2fSW. 2 Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: LM828 |
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