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ADM208EARSZ-REEL1 Datasheet(PDF) 12 Page - Analog Devices |
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ADM208EARSZ-REEL1 Datasheet(HTML) 12 Page - Analog Devices |
12 / 20 page ADM206E/ADM207E/ADM208E/ADM211E/ADM213E Rev. E | Page 12 of 20 destruction can occur immediately because of arcing or heating. Even if catastrophic failure does not occur immediately, the device can suffer from parametric degradation that can result in degraded performance. The cumulative effects of continuous exposure can eventually lead to complete failure. I/O lines are particularly vulnerable to ESD damage. Simply touching or plugging in an I/O cable can result in a static discharge that can damage or destroy the interface product connected to the I/O port. Traditional ESD test methods, such as the MIL-STD-883B method 3015.7, do not fully test product susceptibility to this type of discharge. This test was intended to test product susceptibility to ESD damage during handling. Each pin is tested with respect to all other pins. There are some important differences between the traditional test and the IEC test: • The IEC test is much more stringent in terms of discharge energy. The peak current injected is over four times greater. • The current rise time is significantly faster in the IEC test. • The IEC test is carried out while power is applied to the device. It is possible that the ESD discharge could induce latch-up in the device being tested. This test, therefore, is more represent- tative of a real-world I/O discharge, where the equipment is operating normally with power applied. However, both tests should be performed to ensure maximum protection both during handling and later during field service. R1 R2 C1 ESD TEST METHOD R2 C1 H. BODY MIL-STD-883B 1.5kΩ 100pF IEC 1000-4-2 330Ω 150pF HIGH VOLTAGE GENERATOR DEVICE UNDER TEST Figure 26. ESD Test Standards 100 90 36.8 10 tDL tRL TIME t Figure 27. Human Body Model ESD Current Waveform 100 90 10 0.1ns TO 1ns 60ns 30ns TIME t Figure 28. IEC 1000-4-2 ESD Current Waveform ADM2xxE products are tested using both of the previously mentioned test methods. Pins are tested with respect to all other pins as per the MIL-STD-883B specification. In addition, all I/O pins are tested per the IEC test specification. The products are tested under the following conditions: • Power on (normal operation). • Power on (shutdown mode). • Power off. There are four levels of compliance defined by IEC 1000-4-2. ADM2xxE products meet the most stringent compliance level both for contact and for air-gap discharge. This means that the products are able to withstand contact discharges in excess of 8 kV and air-gap discharges in excess of 15 kV. Table 7. IEC 1000-4-2 Compliance Levels Level Contact Discharge (kV) Air-Gap Discharge (kV) 1 2 2 2 4 4 3 6 8 4 8 15 Table 8. ADM2xxE ESD Test Results ESD Test Method I/O Pin (kV) MIL-STD-883B ±15 IEC 1000-4-2 Contact ±8 Air-Gap ±15 EFT/BURST TESTING (IEC 1000-4-4) IEC 1000-4-4 (previously IEC 801-4) covers EFT/burst immunity. Electrical fast transients occur because of arcing contacts in switches and relays. The tests simulate the interference generated when, for example, a power relay disconnects an inductive load. A spark is generated due to the well-known back EMF effect. In fact, the spark consists of a |
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