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ESD9X3.3ST5G Datasheet(PDF) 2 Page - ON Semiconductor

Part # ESD9X3.3ST5G
Description  Transient Voltage Suppressors
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

ESD9X3.3ST5G Datasheet(HTML) 2 Page - ON Semiconductor

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ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
Ppk
Peak Power Dissipation
C
Max. Capacitance @VR = 0 and f = 1 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
Uni−Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VC VBR
VF
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types)
Device*
Device
Marking
VRWM
(V)
IR (mA)
@ VRWM
VBR (V)
@ IT
(Note 2)
IT
Max IPP (A)
(Note 3)
VC (V)
@ Max IPP
(Note 3)
Ppk (W)
(8 x 20 ms)
C
(pF)
VC
Max
Max
Min
mA
Max
Typ
Typ
Per IEC61000−4−2
(Note 4)
ESD9X3.3ST5G
A
3.3
2.5
5.0
1.0
9.8
10.4
102
80
Figures 1 and 2
(Note 5)
ESD9X5.0ST5G
B
5.0
1.0
6.2
1.0
8.7
12.3
107
65
ESD9X7.0ST5G
5**
7.0
0.1
7.5
1.0
4.0
25
100
65
ESD9X12ST5G
C
12
1.0
13.5
1.0
5.9
23.7
140
30
* Include SZ-prefix devices where applicable.
**Rotated 270 degrees.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
3. Surge current waveform per Figure 5.
4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
5. ESD9X5.0ST5G shown below. Other voltages available upon request.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV contact per IEC 61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV contact per IEC 61000−4−2


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