©2002 Fairchild Semiconductor Corporation

RF1K49223 Rev. B

PSPICE Electrical Model

SUBCKT RF1K49223 2 1 3 ;rev 4/7/97

CA 12 8 7.29e-10

CB 15 14 5.01e-10

CIN 6 8 5.55e-10

DBODY 5 7 DBODYMOD

DBREAK 7 11 DBREAKMOD

DPLCAP 10 6 DPLCAPMOD

EBREAK 5 11 17 18 -35.46

EDS 14 8 5 8 1

EGS 13 8 6 8 1

ESG 5 10 8 6 1

EVTHRES 6 21 19 8 1

EVTEMP 6 20 18 22 1

IT 8 17 1

LDRAIN 2 5 1e-9

LGATE 1 9 1.27e-9

LSOURCE 3 7 4.20e-10

MMED 16 6 8 8 MMEDMOD

MSTRO 16 6 8 8 MSTROMOD

MWEAK 16 21 8 8 MWEAKMOD

RBREAK 17 18 RBREAKMOD 1

RDRAIN 50 16 RDRAINMOD 19.3e-3

RGATE 9 20 7.44

RLDRAIN 2 5 10

RLGATE 1 9 12.7

RLSOURCE 3 7 4.2

RSLC1 5 51 RSLCMOD 1e-6

RSLC2 5 50 1e3

RSOURCE 8 7 RSOURCEMOD 65.37e-3

RVTHRES 22 8 RVTHRESMOD 1

RVTEMP 18 19 RVTEMPMOD 1

S1A 6 12 13 8 S1AMOD

S1B 13 12 13 8 S1BMOD

S2A 6 15 14 13 S2AMOD

S2B 13 15 14 13 S2BMOD

VBAT 22 19 DC 1

ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*48),2.5))}

.MODEL DBODYMOD D (IS = 3.30e-13 RS = 4.56e-2 TRS1 =6.98e-4 TRS2 =8.08e-7 CJO = 8.21e-10 TT = 3.51e-8 M=0.4)

.MODEL DBREAKMOD D (RS = 8.18e- 1TRS1 =5.28e- 3TRS2 = -7.18e-5

.MODEL DPLCAPMOD D (CJO = 2.52e-1 0IS = 1e-3 0N = 10 M=0.6)

.MODEL MMEDMOD PMOS (VTO= -1.95 KP=0.75 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=7.44)

.MODEL MSTROMOD PMOS (VTO= -2.44 KP= 7.25 IS=1e-30 N=10 TOX=1 L=1u W=1u)

.MODEL MWEAKMOD PMOS (VTO= -1.68 KP=0.045 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=74.4 RS=0.1)

.MODEL RBREAKMOD RES (TC1 = 9.45e- 4TC2 = -1.01e-7)

.MODEL RDRAINMOD RES (TC1 = 3.69e-3 TC2 = 5.90e-6)

.MODEL RSLCMOD RES (TC1=3.46e-3 TC2= 1.26e-6)

.MODEL RSOURCEMOD RES (TC1=3.69e-3 TC2=5.90e-6)

.MODEL RVTHRESMOD RES (TC=-5.19e-4 TC2= 5.02e-6)

.MODEL RVTEMPMOD RES (TC1 = -3.54e- 3TC2 = -6.53e-7)

.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 6.94 VOFF= 3.94)

.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.94 VOFF= 6.94)

.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.40 VOFF= -2.60)

.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.60 VOFF= 0.40)

.ENDS

NOTE:For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global

Temperature Options;IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.

18

22

-

+

+

-

5

51

19

8

+

-

17

18

6

8

+

-

5

8

+

-

RBREAK

RVTEMP

VBAT

RVTHRES

IT

17

18

19

22

12

13

15

S1A

S1B

S2A

S2B

CA

CB

EGS

EDS

14

8

13

8

14

13

MWEAK

DBODY

RSOURCE

SOURCE

11

7

3

LSOURCE

RLSOURCE

CIN

RDRAIN

EVTHRES

16

21

8

MMED

MSTRO

DRAIN

2

LDRAIN

RLDRAIN

DBREAK

DPLCAP

ESLC

RSLC1

10

5

51

50

RSLC2

1

GATE

RGATE

EVTEMP

9

ESG

LGATE

RLGATE

20

+

-

+

-

+

-

8

6

EBREAK

6

RF1K49223