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MTD20N06HD Datasheet(PDF) 6 Page - Motorola, Inc |
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MTD20N06HD Datasheet(HTML) 6 Page - Motorola, Inc |
6 / 12 page MTD20N06HD 6 Motorola TMOS Power MOSFET Transistor Device Data t, TIME Figure 10. Reverse Recovery Time (trr) di/dt = 300 A/ µs Standard Cell Density High Cell Density tb trr ta trr SAFE OPERATING AREA The Forward Biased Safe Operating Area curves define the maximum simultaneous drain–to–source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junc- tion temperature and a case temperature (TC) of 25°C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, “Transient Thermal Resistance – Gen- eral Data and Its Use.” Switching between the off–state and the on–state may tra- verse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded, and that the transition time (tr, tf) does not exceed 10 µs. In addition the total power averaged over a complete switching cycle must not exceed (TJ(MAX) – TC)/(R θJC). A power MOSFET designated E–FET can be safely used in switching circuits with unclamped inductive loads. For reli- able operation, the stored energy from circuit inductance dis- sipated in the transistor while in avalanche must be less than the rated limit and must be adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases non–linearly with an increase of peak current in avalanche and peak junction tem- perature. Although many E–FETs can withstand the stress of drain– to–source avalanche at currents up to rated pulsed current (IDM), the energy rating is specified at rated continuous cur- rent (ID), in accordance with industry custom. The energy rating must be derated for temperature as shown in the ac- companying graph (Figure 12). Maximum energy at currents below rated continuous ID can safely be assumed to equal the values indicated. VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area 0 25 50 75 100 125 40 60 20 10 30 150 50 0.1 1.0 100 100 1.0 0.1 10 Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature 10 10 µs 100 µs 1 ms dc 10 ms ID = 20 A VGS = 20 V SINGLE PULSE TC = 25°C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT |
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