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RFP14N05L Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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RFP14N05L Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page ©2002 Fairchild Semiconductor Corporation RFD14N05L, RFD14N05LSM, RFP14N05L Rev. B Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified RFD14N05L, RFD14N05LSM, RFP14N05L UNITS Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 50 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 50 V Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ± 10 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 14 Refer to Peak Current Curve A Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Refer to UIS Curve Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 0.32 W W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 150oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V, Figure 13 50 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA, Figure12 1 - 2 V Zero Gate Voltage Drain Current IDSS VDS = 40V, VGS = 0V - - 1 µA VDS = 40V, VGS = 0V, TC = 150 oC- - 50 µA Gate to Source Leakage Current IGSS VGS = ±10V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 14A, VGS = 5V, Figures 9, 11 - - 0.100 Ω Turn-On Time t(ON) VDD = 25V, ID = 7A, RL = 3.57Ω, VGS = 5V, RGS = 0.6Ω - - 60 ns Turn-On Delay Time td(ON) -13 - ns Rise Time tr -24 - ns Turn-Off Delay Time td(OFF) -42 - ns Fall Time tf -16 - ns Turn-Off Time t(OFF) - - 100 ns Total Gate Charge Qg(TOT) VGS = 0V to 10V VDD = 40V, ID = 14A, RL = 2.86Ω Figures 20, 21 - - 40 nC Gate Charge at 5V Qg(5) VGS = 0V to 5V - - 25 nC Threshold Gate Charge Qg(TH) VGS = 0V to 1V - - 1.5 nC Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz Figure 14 - 670 - pF Output Capacitance COSS - 185 - pF Reverse Transfer Capacitance CRSS -50 - pF Thermal Resistance Junction to Case RθJC - - 3.125 oC/W Thermal Resistance Junction to Ambient RθJA TO-251 and TO-252 - - 100 oC/W RθJA TO-220 - - 80 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) VSD ISD = 14A - - 1.5 V Diode Reverse Recovery Time trr ISD = 14A, dISD/dt = 100A/µs - - 125 ns NOTES: 2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%. 3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current Capability Curve (Figure 5). RFD14N05L, RFD14N05LSM, RFP14N05L |
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