RFD16N03 datasheet(3/7 Pages) FAIRCHILD

Part #	RFD16N03

Description	16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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3 / 7 page

5-33

RFD16N03L, RFD16N03LSM

Typical Performance Curves

FIGURE 1. SAFE OPERATING AREA CURVE

FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL

IMPEDANCE

FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE

FIGURE 4. PEAK CURRENT CAPABILITY

FIGURE 5. TYPICAL SATURATION CHARACTERISTICS

FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

10

50

1

500

10

1

TC = +25

oC

DC

100

µs

1ms

10ms

LIMITED BY rDS(ON)

AREA MAY BE

OPERATION IN THIS

100

VDSS MAX = 30V

100ms

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC + TC

PDM

t1

t2

.01

.02

.05

0.1

0.2

0.5

t, RECTANGULAR PULSE DURATION (s)

101

10-3

10-2

10-1

100

1

10-5

10-4

2

0.01

0.1

SINGLE PULSE

10

5

0

25

50

75

100

125

150

TC, CASE TEMPERATURE (

oC)

20

175

15

t, PULSE WIDTH (s)

10

10-5

10-4

10-3

10-2

10-1

100

101

TC = +25

oC

100

500

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

I

= I

25

175 - TC

150

FOR TEMPERATURES

ABOVE +25oC DERATE PEAK

CURRENT AS FOLLOWS:

VGS = 10V

VGS = 5V

0

25

0

1.0

2.0

3.0

5.0

50

75

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

PULSE DURATION = 250

µs, T

C = +25

oC

VGS = 4V

VGS = 10V

100

4.0

VGS = 3V

VGS = 5V

VGS = 4.5V

VGS = 3.5V

0

3.0

4.5

6.0

7.5

1.5

0

25

50

75

+175oC

PULSE TEST

PULSE DURATION = 250

µs

DUTY CYCLE = 0.5% MAX

VDD = 15V

VGS, GATE-TO-SOURCE VOLTAGE (V)

-55oC

100

+25oC

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RFD16N03 Datasheet(PDF) 3 Page - Fairchild Semiconductor

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