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RFD16N05SM Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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RFD16N05SM Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page ©2002 Fairchild Semiconductor Corporation RFD16N05, RFD16N05SM Rev. B Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified RFD16N05, RFD16N05SM, UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 50 V Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 50 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 16 Refer to Peak Current Curve A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ± 20 V Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Refer to Figure 5 Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 0.48 W W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 150oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 11) 50 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA2 - 4 V Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 150 oC -- 25 µA Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 16A, VGS = 10V (Figure 9) - - 0.047 Ω Turn-On Time t(ON) VDD = 25V, ID = 8A, RL = 3.125Ω, VGS = 10V, RGS = 25Ω (Figure 13) - - 65 ns Turn-On Delay Time td(ON) -14 - ns Rise Time tr -30 - ns Turn-Off Delay Time td(OFF) -55 - ns Fall Time tf -30 - ns Turn-Off Time t(OFF) - - 125 ns Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 40V, ID ≈ 16A, RL = 2.5Ω Ig(REF) = 0.8mA (Figure 13) - - 80 nC Gate Charge at 10V Qg(10) VGS = 0V to 10V - - 45 nC Threshold Gate Charge Q(TH) VGS = 0V to 2V - - 2.2 nC Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) - 900 - pF Output Capacitance COSS - 325 - pF Reverse Transfer Capacitance CRSS - 100 - pF Thermal Resistance Junction to Case RθJC - - 2.083 oC/W Thermal Resistance Junction to Ambient RθJA TO-251 and TO-252 - - 100 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 16A - - 1.5 V Diode Reverse Recovery Time trr ISD = 16A, dISD/dt = 100A/µs - - 125 ns NOTES: 2. Pulse test: pulse width ≤ 250µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current Capability Curve (Figure 5). RFD16N05, RFD16N05SM |
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