©2002 Fairchild Semiconductor Corporation

RFD16N05, RFD16N05SM Rev. B

Absolute Maximum Ratings

RFD16N05, RFD16N05SM,

UNITS

50

V

50

V

16

Refer to Peak Current Curve

A

± 20

V

Refer to Figure 5

72

0.48

W

-55 to 175

Maximum Temperature for Soldering

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

Electrical Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

50

-

-

V

Gate Threshold Voltage

-

4

V

Zero Gate Voltage Drain Current

-

-

1

µA

--

25

µA

Gate to Source Leakage Current

-

-

±100

nA

Drain to Source On Resistance (Note 2)

-

-

0.047

Ω

Turn-On Time

(Figure 13)

-

-

65

ns

Turn-On Delay Time

-14

-

ns

Rise Time

-30

-

ns

Turn-Off Delay Time

-55

-

ns

Fall Time

-30

-

ns

Turn-Off Time

-

-

125

ns

Total Gate Charge

(Figure 13)

-

-

80

nC

Gate Charge at 10V

-

-

45

nC

Threshold Gate Charge

-

-

2.2

nC

Input Capacitance

(Figure 12)

-

900

-

pF

Output Capacitance

-

325

-

pF

Reverse Transfer Capacitance

-

100

-

pF

Thermal Resistance Junction to Case

-

-

2.083

Thermal Resistance Junction to Ambient

TO-251 and TO-252

-

-

100

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage

-

-

1.5

V

Diode Reverse Recovery Time

-

-

125

ns

NOTES:

2. Pulse test: pulse width

≤ 250µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current

Capability Curve (Figure 5).

RFD16N05, RFD16N05SM