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NTMFS4C10NT3G Datasheet(PDF) 1 Page - ON Semiconductor |
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NTMFS4C10NT3G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 7 page © Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 3 1 Publication Order Number: NTMFS4C10N/D NTMFS4C10N Power MOSFET 30 V, 46 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery • DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJA (Note 1) Steady State TA = 25°C ID 15.0 A TA = 80°C 11.2 Power Dissipation RqJA (Note 1) TA = 25°C PD 2.49 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 22.5 A TA = 80°C 16.8 Power Dissipation RqJA ≤ 10 s (Note 1) TA = 25°C PD 5.6 W Continuous Drain Current RqJA (Note 2) TA = 25°C ID 8.2 A TA = 80°C 6.2 Power Dissipation RqJA (Note 2) TA = 25°C PD 0.75 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 46 A TC =80°C 34 Power Dissipation RqJC (Note 1) TC = 25°C PD 23.6 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 132 A Current Limited by Package TA = 25°C IDmax 80 A Operating Junction and Storage Temperature TJ, TSTG −55 to +150 °C Source Current (Body Diode) IS 21 A Drain to Source dV/dt dV/dt 7.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 10 V, IL = 25 Apk, L = 0.1 mH, RGS = 25 W) (Note 3) EAS 31 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. This is the absolute maximum rating. Parts are 100% tested at TJ = 25°C, VGS = 10 V, IL = 17 Apk, EAS = 14 mJ. SO−8 FLAT LEAD CASE 488AA STYLE 1 MARKING DIAGRAM http://onsemi.com A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceabililty 4C10N AYWZZ 1 V(BR)DSS RDS(ON) MAX ID MAX 30 V 6.95 mW @ 10 V 46 A 10.8 mW @ 4.5 V N−CHANNEL MOSFET Device Package Shipping† ORDERING INFORMATION NTMFS4C10NT1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NTMFS4C10NT3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. S S S G D D D D G (4) S (1,2,3) D (5−8) |
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