RFP3055LE datasheet(2/8 Pages) FAIRCHILD

Part #	RFP3055LE

Description	11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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RFD3055LE, RFD3055LESM, RFP3055LE Rev. B

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

RFD3055LE, RFD3055LESM,

RFP3055LE

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

60

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

60

V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±16

V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

11

Refer to Peak Current Curve

A

Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS

Refer to UIS Curve

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

38

0.25

W

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 175

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 150oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V

60

-

V

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA1

-

3

V

Zero Gate Voltage Drain Current

IDSS

VDS = 55V, VGS = 0V

-

1

µA

VDS = 50V, VGS = 0V, TC = 150

oC

-

250

µA

Gate to Source Leakage Current

IGSS

VGS = ±16V

-

±100

nA

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 8A, VGS = 5V (Figure 11)

-

0.107

Ω

Turn-On Time

tON

VDD ≈ 30V, ID = 8A,

VGS = 4.5V, RGS = 32Ω

(Figures 10, 18, 19)

-

170

ns

Turn-On Delay Time

td(ON)

-8

-

ns

Rise Time

tr

-

105

-

ns

Turn-Off Delay Time

td(OFF)

-22

-

ns

Fall Time

tf

-39

-

ns

Turn-Off Time

tOFF

-

92

ns

Total Gate Charge

Qg(TOT)

VGS = 0V to 10V

VDD = 30V, ID = 8A,

Ig(REF) = 1.0mA

(Figures 20, 21)

-

9.4

11.3

nC

Gate Charge at 5V

Qg(5)

VGS = 0V to 5V

-

5.2

6.2

nC

Threshold Gate Charge

Qg(TH)

VGS = 0V to 1V

-

0.36

0.43

nC

Input Capacitance

CISS

VDS = 25V, VGS = 0V, f = 1MHz

(Figure 14)

-

350

-

pF

Output Capacitance

COSS

-

105

-

pF

Reverse Transfer Capacitance

CRSS

-23

-

pF

Thermal Resistance Junction to Case

RθJC

-

3.94

oC/W

Thermal Resistance Junction to Ambient

RθJA

TO-220AB

-

62

oC/W

TO-251AA, TO-252AA

-

100

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage

VSD

ISD = 8A

-

1.25

V

Diode Reverse Recovery Time

trr

ISD = 8A, dISD/dt = 100A/µs

-

66

ns

NOTES:

2. Pulse Test: Pulse Width

≤ 300ms, Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current

Capability Curve (Figure 5).

RFD3055LE, RFD3055LESM, RFP3055LE

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