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AO4304 Datasheet(PDF) 1 Page - shenzhen wanhexing Electronics Co.,Ltd

Part # AO4304
Description  30V N-Channel MOSFET
Download  6 Pages
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Manufacturer  WHXPCB [shenzhen wanhexing Electronics Co.,Ltd]
Direct Link  http://www.whxpcb.com
Logo WHXPCB - shenzhen wanhexing Electronics Co.,Ltd

AO4304 Datasheet(HTML) 1 Page - shenzhen wanhexing Electronics Co.,Ltd

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AO4304
30V N-Channel MOSFET
General Description
Product Summary
VDS
ID (at VGS=10V)
18A
RDS(ON) (at VGS=10V)
< 6.0m
Ω
RDS(ON) (at VGS = 4.5V)
< 7.6m
Ω
100% UIS Tested
100% Rg Tested
Symbol
VDS
The AO4304 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
30V
Drain-Source Voltage
30
G
D
S
SOIC-8
Top View
Bottom View
D
D
D
D
S
S
S
G
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJL
Maximum Junction-to-Ambient
A D
TA=25°C
TA=70°C
°C/W
RθJA
27
Maximum Junction-to-Ambient
A
Avalanche Current
C
200
A
12
65
61
A
35
15
52
35
°C/W
°C/W
Maximum Junction-to-Lead
Pulsed Drain Current
C
Continuous Drain
Current
TA=70°C
2.3
V
±20
Gate-Source Voltage
14
V
Drain-Source Voltage
30
ID
18
Units
Thermal Characteristics
Parameter
Typ
Max
mJ
Junction and Storage Temperature Range
-55 to 150
°C
Power Dissipation
B
PD
Avalanche energy L=0.1mH
C
TA=25°C
W
3.6
G
D
S
SOIC-8
Top View
Bottom View
D
D
D
D
S
S
S
G
Rev 0: Oct 2010
www.aosmd.com
Page 1 of 6
万和兴电子有限公司 www.whxpcb.com


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