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AO4403 Datasheet(PDF) 2 Page - shenzhen wanhexing Electronics Co.,Ltd |
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AO4403 Datasheet(HTML) 2 Page - shenzhen wanhexing Electronics Co.,Ltd |
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2 / 5 page  AO4403 Symbol Min Typ Max Units BVDSS -30 V VDS=-30V, VGS=0V -1 TJ=55°C -5 IGSS ±100 nA VGS(th) Gate Threshold Voltage -0.5 -0.9 -1.3 V ID(ON) -30 A 40 48 TJ=125°C 60 72 45 57 m Ω 60 80 m Ω gFS 19 S VSD -0.7 -1 V IS -3.5 A Ciss 645 780 pF Coss 80 pF Crss 55 pF Rg 4 7.8 12 Ω Qg(4.5V) 7 nC Qgs 1.5 nC Qgd 2.5 nC tD(on) 6.5 ns tr 3.5 ns tD(off) 41 ns SWITCHING PARAMETERS Gate resistance VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-15V, ID=-6A Gate Source Charge ID=-250µA, VGS=0V VGS=-4.5V, VDS=-5V Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Forward Transconductance Diode Forward Voltage RDS(ON) Static Drain-Source On-Resistance Drain-Source Breakdown Voltage On state drain current VGS=-2.5V, ID=-2A VGS=-10V, ID=-6A IDSS µA VDS=VGS ID=-250µA VDS=0V, VGS= ±12V Zero Gate Voltage Drain Current Gate-Body leakage current Turn-On Rise Time Turn-Off DelayTime m Ω IS=-1A,VGS=0V VDS=-5V, ID=-6A VGS=-4.5V, ID=-4A Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS VGS=-10V, VDS=-15V, RL=2.5Ω, RGEN=6Ω Gate Drain Charge Total Gate Charge Reverse Transfer Capacitance VGS=0V, VDS=-15V, f=1MHz tD(off) 41 ns tf 9 ns trr 11 ns Qrr 3.5 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time Turn-Off Fall Time Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs Turn-Off DelayTime IF=-6A, dI/dt=100A/µs RGEN=6Ω A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialT J=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. Rev 7: Mar. 2011 www.aosmd.com Page 2 of 5 万和兴电子有限公司 www.whxpcb.com |
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