MBR2535CT, MBR2545CT

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2

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

MBR2535CT

MBR2545CT

35

45

V

Average Rectified Forward Current

30

A

Peak Repetitive Forward Current,

30

A

Non−Repetitive Peak Surge Current per Diode Leg

(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)

150

A

Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)

1.0

A

Storage Temperature Range

−65 to +175

°C

Operating Junction Temperature (Note 1)

−65 to +175

°C

dv/dt

10,000

V/ms

ESD Ratings: Machine Model = C

ESD

>400

>8000

V

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

Characteristic

Symbol

Value

Unit

Thermal Resistance,− Junction−to−Case

− Junction−to−Ambient (Note 2)

1.5

50

°C/W

2. When mounted using minimum recommended pad size on FR−4 board.

Symbol

Characteristic

Condition

Min

Typ

Max

Unit

Instantaneous Forward Voltage

(Note 3)

−

−

−

−

−

0.50

−

0.65

0.62

0.57

0.82

0.72

V

Instantaneous Reverse Current

(Note 3)

−

−

−

9.0

0.2

25

mA

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.