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AO4578 Datasheet(PDF) 2 Page - shenzhen wanhexing Electronics Co.,Ltd |
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AO4578 Datasheet(HTML) 2 Page - shenzhen wanhexing Electronics Co.,Ltd |
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2 / 5 page  AO4578 Symbol Min Typ Max Units BVDSS 30 V VDS=30V, VGS=0V 1 TJ=55°C 5 IGSS ±100 nA VGS(th) Gate Threshold Voltage 1.4 1.8 2.2 V 4.7 5.7 TJ=125°C 6.5 7.8 7.2 9 m Ω gFS 62 S VSD 0.7 1 V IS 4.2 A Ciss 1128 pF Coss 435 pF Crss 59 pF Rg 0.7 1.4 2.1 Ω Qg(10V) 16.2 25 nC Qg(4.5V) 7.4 15 nC Qgs 4.3 nC Qgd 2.3 nC tD(on) 5.5 ns tr 3 ns t 22.5 ns Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Drain-Source Breakdown Voltage ID=250µA, VGS=0V VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance IDSS µA VDS=VGS，ID=250µA VDS=0V, VGS=±20V Zero Gate Voltage Drain Current Gate-Body leakage current m Ω IS=1A,VGS=0V VDS=5V, ID=20A VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage Turn-On Rise Time Turn-Off DelayTime Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS VGS=10V, VDS=15V, RL=0.75Ω, R =3 Ω Reverse Transfer Capacitance VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Gate resistance f=1MHz Total Gate Charge VGS=10V, VDS=15V, ID=20A Gate Source Charge Gate Drain Charge Total Gate Charge tD(off) 22.5 ns tf 3 ns trr 13.3 ns Qrr 25 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Turn-Off DelayTime IF=20A, dI/dt=500A/µs Turn-Off Fall Time RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialT J=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. Rev.1.0: August 2013 www.aosmd.com Page 2 of 5 万和兴电子有限公司 www.whxpcb.com |
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