Electronic Components Datasheet Search |
|
RLD03N06CLESM Datasheet(PDF) 5 Page - Fairchild Semiconductor |
|
RLD03N06CLESM Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 13 page 5 RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Test Circuit and Waveform FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 14. RESISTIVE SWITCHING WAVEFORMS VDD VDS VGS 0V RGS DUT RL tON tD(ON) tR 90% 10% VDS 90% 10% tF tD(OFF) tOFF 90% 50% 50% 10% PULSE WIDTH VGS Detailed Description Temperature Dependence of Current Limiting and Switching Speed Performance The RLD03N06CLE, RLD03N06CLESM and RLP03N06CLE are a monolithic power device which incorporates a Logic Level power MOSFET transistor with a current sensing scheme and control circuitry to enable the device to self limit the drain source current flow. The current sensing scheme supplies cur- rent to a resistor that is connected across the base to emitter of a bipolar transistor in the control section. The collector of this bipolar transistor is connected to the gate of the power MOS- FET transistor. When the ratiometric current from the current sensing reaches the value required to forward bias the base emitter junction of this bipolar transistor, the bipolar “turns on”. A resistor is incorporated in series with the gate of the power MOSFET transistor allowing the bipolar transistor to adjust the drive on the gate of the power MOSFET transistor to a voltage which then maintains a constant current in the power MOSFET transistor. Since both the ratiometric current sensing scheme and the base emitter unction voltage of the bipolar transistor vary with temperature, the current at which the device limits is a function of temperature. This dependence is shown in Figure 3. The resistor in series with the gate of the power MOSFET transistor also results in much slower switching performance than in standard power MOSFET transistors. This is an advantage where fast switching can cause EMI or RFI. The switching speed is very predictable. DC Operation The limit on the drain to source voltage for operation in cur- rent limiting on a steady state (DC) basis is shown in the equation below. The dissipation in the device is simply the applied drain to source voltage multiplied by the limiting cur- rent. This device, like most power MOSFET devices today, is limited to 175oC. The maximum voltage allowable can, therefore, be expressed as shown in Equation 1: (EQ. 1) The results of this equation are plotted in Figure 15 for vari- ous heatsinks. V DS 150 °CT A MBIENT – () I LM RθJC RθJA + () • ------------------------------------------------------- = Duty Cycle Operation In many applications either the drain to source voltage or the gate drive is not available 100% of the time. The copper header on which the RLD03N06CLE, RLD03N06CLESM and RLP03N06CLE is mounted has a very large thermal storage capability, so for pulse widths of less then 1ms, the temperature of the header can be considered a constant, thereby the junction temperature can be calculated simply as shown in Equation 2: (EQ. 2) Generally the heat storage capability of the silicon chip in a power transistor is ignored for duty cycle calculations. Mak- ing this assumption, limiting junction temperature to 175oC and using the TC calculated in Equation 2, the expression for maximum VDS under duty cycle operation is shown in Equa- tion 3: (EQ. 3) These values are plotted as Figures 16 through 21 for vari- ous heatsink thermal resistances. Limited Time Operations Protection for a limited period of time is sufficient for many applications. As stated above the heat storage in the silicon chip can usually be ignored for computations of over 10 ms, thereby the thermal equivalent circuit reduces to a simple enough circuit to allow easy computation on the limiting con- ditions. The variation in limiting current with temperature complicates the calculation of junction temperature, but a simple straight line approximation of the variation is accurate enough to allow meaningful computations. The curves shown as Figures 22 through 25 (RLP03N06CLE) and Fig- ure 26 through 29 (RLD03N06CLE and RLD03N06CLESM) give an accurate indication of how long the specified voltage can be applied to the device in the current limiting mode without exceeding the maximum specified 175oC junction temperature. In practice this tells you how long you have to alleviate the condition causing the current limiting to occur. T C V DS I D • D • RθCA • () T A MBIENT + = V DS 150 C T C – o I LM DRθJC • • ------------------------------------------ = |
Similar Part No. - RLD03N06CLESM |
|
Similar Description - RLD03N06CLESM |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |